Multi diode target in semiconductor substrate as charge store - has cut=outs in surface between diode matrix producing high recombination

摘要

A multi-diode target is used as a charge store for image orthicons. It has a number of opto-electronic semiconductor diodes mounted in rows and columns in a semiconductor substrate. The semiconductor substrate (1) is of a first type of conductivity and the separated semiconductor zone (2) on one surface is of the second type of conductivity. These produce on junctions to form the diodes. There are cut-outs (3) between the diodes, which will ensure that the thickness of the semiconductor substrate between the diode is less than in the area of the semiconductor diodes themselves. The recombination between the diodes is high.