NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A non-volatile semiconductor memory device includes source and drain regions formed on a semiconductor substrate to define p-n junctions with the substrate and a gate layer having a silicon oxide film and a silicon nitride film. A high impurity concentration diffusion layers are formed around at least one of the source and drain regions, which have the same conductivity type as the substrate, an impurity concentration of above 1017 atoms cm<->3 and a width of below 1 mu m.