发明名称 GLASS PASSIVATION SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To prevent breakdown voltage defect owing to deviation of positions of pellets and frames and flows of solder by forming a glass film also on the portions between the mesa grooves on the anode side of each pellet.</p>
申请公布号 JPS5310973(A) 申请公布日期 1978.01.31
申请号 JP19760085223 申请日期 1976.07.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 HOKUYOU SHIGERU
分类号 H01L21/301;H01L21/302;H01L21/31;H01L21/316;H01L29/74 主分类号 H01L21/301
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