| 摘要 |
A high-frequency transistor has a suitably doped and structured semiconductor chip (1) that is composed of a doped Si substrate and has base, collector and emitter contactings (2, 3, 4). The chip (1) is surrounded by a housing (8), the contacts being connected to the respective base, collector and emitter terminals (6, 7, 5) of the housing. With the housing the transistor has a high gain at frequencies above 1 GHz. The base, collector and emitter contacts (2, 3, 4) are provided at the upper side of the semiconductor chip (1). The semiconductor chip (1) has its underside arranged on the emitter terminal (5) of the housing (8) which is fashioned as HF ground. The emitter contact (4) is connected over a short distance to the emitter terminal (5) of the housing (8). The base and collector contacts (2, 3) are each respectively connected via at least one bond wire (9) to the respective base or collector terminals (6, 7).
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