发明名称 |
Process for fabrication of dielectric optical waveguide devices |
摘要 |
The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner. |
申请公布号 |
US4071383(A) |
申请公布日期 |
1978.01.31 |
申请号 |
US19760685368 |
申请日期 |
1976.05.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGATA, SEIICHI;TANAKA, TSUNEO;FUKAI, MASAKAZU |
分类号 |
C30B23/08;C23C14/04;C30B23/04;G02B6/13;H01L21/203;H01S5/00;(IPC1-7):H01L21/20;H01L29/20 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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