发明名称 Process for fabrication of dielectric optical waveguide devices
摘要 The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.
申请公布号 US4071383(A) 申请公布日期 1978.01.31
申请号 US19760685368 申请日期 1976.05.11
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGATA, SEIICHI;TANAKA, TSUNEO;FUKAI, MASAKAZU
分类号 C30B23/08;C23C14/04;C30B23/04;G02B6/13;H01L21/203;H01S5/00;(IPC1-7):H01L21/20;H01L29/20 主分类号 C30B23/08
代理机构 代理人
主权项
地址