| 摘要 |
PURPOSE:To obtain a device, on which a planar integration is possible, by a method wherein a process for forming selectively and epitaxially a II-VI compound semiconductor is included in a process for manufacturing optical waveguides. CONSTITUTION:An N-type GaAs buffer layer 150 is laminated on an N-type GaAs substrate. An N-type AlxGa1-xAs (x=0.1) layer 102, an N-type GaAs layer 103, a P-type AlxGa1-XAs (x=0.1) layer 104 and a P-type GaAs layer 151 are epitaxially grown and are laminated in order by an MOCVD method to obtain a laser oscillation active layer 102. Then, both sides of the layer 102 are etched away leaving the part of a laser resonator to remove up to the surface of the layer 150 and the surface other than optical waveguide parts 119 and 120 on both sides of the laser resonator is coated with an SiO2 film. Then, ZnSxSe1-x layers 107 and 111 which are respectively used as a clad layer are formed on the parts 119 and 120 by a selective epitaxial growth using an MOCVD method. Subsequently, ZnSe layers which are used as optical waveguide layers 108 and 112 are similarly formed by a selective epitaxial growth. |
