| 发明名称 |
54*MOS TYPE SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:To achieve the improvement in the noise performance of a short channel MOSFET by using one of HfO2 Al2O3, Nb2O5, Ta2O5 to a gate insulation film. |
| 申请公布号 |
JPS5310283(A) |
申请公布日期 |
1978.01.30 |
| 申请号 |
JP19760084851 |
申请日期 |
1976.07.15 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKEMOTO TOYOKI;INOUE MICHIHIRO |
| 分类号 |
H01L29/78;H01L21/283;H01L21/8234;H01L27/06;H01L29/51 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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