| 摘要 |
<p>The present bistable semiconductor device has at least three junctions. At least one of the outer junctions is interrupted by short circuit means hereafter referred to as shorting areas on simply shortings which extend, preferably as narrow strips, through the semiconductor zone located adjacent to main electrode means of the device, whereby the shorting areas extend substantially in parallel to the direction of propagation of the conductive state which starts at and extends from a gate electrode in response to a control pulse applied to said gate electrode.</p> |
