| 摘要 |
Instabilities of the reverse and forward blocking-state characteristics of thyristors and of the blocking-state voltage-current characteristics of diodes and transistors can be ascribed to changes in the properties of the passivating protective layers and/or the semiconductor surface. At that point, where the pn junction reaches the surface, a new protective layer (8) consisting of silicon is vapour-deposited. This makes it possible to eliminate the instabilities and to increase significantly the yield of usable semiconductor components. The passivating protective layer is designed, in particular, for semiconductor components having a high reverse voltage or blocking voltage. <IMAGE> |
