| 发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To produce a memory LSI built with MIS type capacitors of a small area and a large capacity by burying thermally oxidized Si in the pin holes existing beforehand in Si3N4 film. |
| 申请公布号 |
JPS538088(A) |
申请公布日期 |
1978.01.25 |
| 申请号 |
JP19760081988 |
申请日期 |
1976.07.12 |
| 申请人 |
HITACHI LTD |
发明人 |
IWAMATSU SEIICHI;TANIGAKI YUKIO |
| 分类号 |
H01L27/10;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 |
主分类号 |
H01L27/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
