| 摘要 |
<p>An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.</p> |
