INSULATED GATE TYPE FIELD EFFECT SEMICONDUCTOR DEVICE,申请号JP19760081544-传众专利搜索

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发明名称	INSULATED GATE TYPE FIELD EFFECT SEMICONDUCTOR DEVICE
摘要
申请公布号	JPS536581(A)	申请公布日期	1978.01.21
申请号	JP19760081544	申请日期	1976.07.08
申请人	NIPPON ELECTRIC CO	发明人	WADA TOSHIO
分类号	H01L29/78;H01L21/336;H01L29/36	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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