发明名称
摘要 A process for manufacturing a base for a semiconductor device having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom surface of the base, said process comprising the steps of preparing a blank of metal material; deforming by extrusion said blank with a shallower recess portion formed in said blank on the upper surface and with a shorter stem portion extending from the bottom of said blank while forming a projection on the bottom of said shallow recess portion in said blank; further deforming said blank so that said recess portion in said blank is deepened whereby said recess is formed in said base and so that said stem portion is lengthened whereby an unthreaded stem is formed; and threadedly rolling said stem on said blank.
申请公布号 FR2236572(B1) 申请公布日期 1978.01.20
申请号 FR19740023882 申请日期 1974.07.09
申请人 SATO YOSHIO 发明人
分类号 H01L21/06;H01L21/48;H01L23/488;(IPC1-7):21C23/04;01L23/12;21K23/04 主分类号 H01L21/06
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