| 摘要 |
PURPOSE:To form a T-shaped gate having both small wings by emitting electrons while having almost the same degree of an emitter diameter with the width of any of the opening parts to be formed. CONSTITUTION:After laminating a resist 101 having low sensitivity, a resist 102 having high sensitivity and a resist 103 having average sensitivity on a semiconductor substrate, electron rays are irradiated to make the width of an opening part 106 to be formed by penetrating the three-layered resists narrow, wide and average in order from the side of the substrate to form a micropattern. In this case, electron rays are emitted from a thermoelectric field type emitter having a diameter of almost the same degree of width of any of the opening parts. That is, an aspect ratio is heightened by suppressing a proximity effect inside the resists. The width of the openings of the upper and middle layer resist is made proper while the opening end face is made vertical to the substrate surface so as to heighten mechanical strength. Thereby, a T-shaped gate 105 having both small wings can be formed. |
