| 摘要 |
PURPOSE:To give rise to no crack, even when a glass layer is made thicker, by covering the exposed portion of a PN junction with a first thin glass layer having a thickness of 3-10mum and covering the first glass layer with a second glass layer which is 30-50mum in thickness and whose coefficient of thermal expansion is made equal substantially to that of the semiconductor substrate by mixing the glass power with the semiconductor power of the same kind as the substrate. |
