GAS PHASE GROWTH METHOD OF COMPOUND SEMICONDUCTOR,申请号JP19760078865-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	GAS PHASE GROWTH METHOD OF COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPS534779(A)	申请公布日期	1978.01.17
申请号	JP19760078865	申请日期	1976.07.05
申请人	FUJITSU LTD	发明人	YONENO SHIYUNJI
分类号	C30B25/12;C01B25/08;C30B29/40;H01L21/205	主分类号	C30B25/12
代理机构		代理人
主权项
地址

您可能感兴趣的专利

A gas flowmeter

Chuck for clamping pallet with centering means

Method and apparatus for automated fluid loss measurements of drilling fluids

Modular construction system

Magazine status indicator

Half-pallet for use with a pallet lift jack

Apparatus for detection of foreign matter in fibre material

Hydraulic control device for construction machinery

DEVICE FOR RECEIVING AND ISSUING VALUE DOCUMENTS

READ-SIDE ANTI-THEFT DISCS

BI-DIRECTIONAL HORIZONTAL SPRAYING AEROSOL FIRE-EXTINGUISHING APPARATUS

Fraud protection

Barometric portable electronic device

DIHYDROPYRIDINE DERIVATIVE FOR TREATING CANCER OR A PRE-CANCEROUS CONDITION AND OTHER CONDITIONS

Optische Abtastvorrichtung

DUAL POLARISIERTE ANTENNE MIT LÄNGS- ODER QUERSTEGEN

ELEKTROPNEUMATISCHE BREMSSTEUERUNGSEINRICHTUNG

BEFESTIGUNGSMITTEL ZUR BEFESTIGUNG VON BAHNSCHIENEN AUF GLEISSCHWELLEN ODER GLEISFAHRWEGEN