METHOD FOR INCREASING METAL-REMOVAL RATE DURING CHEMICAL-MECHANICAL POLISHING PROCESS FOR SEMICONDUCTOR, AND CMP METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for enhancing the removal rate of a metal barrier layer without affecting on the removal rate of a conductive layer from a semiconductor wafer during a CMP(chemical-mechanical polish) process. SOLUTION: This method includes the steps in which a semiconductor wafer 8 comprising an insulator layer 12, a metal barrier layer 14 formed at least in a part region of the insulator layer 12, and a conductive layer 16 is provided, and a step in which the semiconductor wafer 8 is allowed to contact a chemical- mechanical polishing slurry containing at least one chelation agent by an amount which increases the metal removal rate, are provided.