| 摘要 |
The invention relates to a method of producing objects of cast iron containing compacted (vermicular) graphite crystals, by preparing a cast iron melt having substantially a carbon content at the desired final level and a silicon content below the desired final value, so that the equilibrium temperature (TE) for the reaction between carbon and SiO2 falls near 1400° C., and adjusting the temperature of the melt (TM) to a value between the equilibrium temperature (TE) and the "boiling temperature" (TB), to allow absorption of oxygen by the melt to a level exceeding the desired level at the time the melt is poured into a mold, adding the required amount of silicon, and thereafter reducing the oxygen content by addition of magnesium or magnesium containing material, preferably a FeSiMg-alloy to an oxygen level of 10 to 20 ppm oxygen in liquid solution, and forming particles of magnesium silicates as well as cast objects obtained by the method. |
