发明名称 |
Process for selectively removing impurity phases on the surfaces of sulfide-containing chalcopyrite semiconductors comprises electrochemically etching the impurity phases using an electrolyte having an alkaline pH value |
摘要 |
Process for selectively removing impurity phases on the surfaces of sulfide-containing chalcopyrite semiconductors comprises electrochemically etching the impurity phases using an electrolyte having an alkaline pH value; immersing a sulfide-containing chalcopyrite semiconductor sample having impurity phases on its surface into the electrolyte; and applying a potential between the measuring electrode and the counter electrode. Preferred Features: An aqueous solution of potassium sulfate having a concentration of 0.1 M and a pH of at least 10 is used as electrolyte in a three electrode cell containing a measuring electrode, counter electrode and reference electrode, and the potential is cyclically determined several times opposite the reference electrode in a determined region.
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申请公布号 |
DE10022652(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
DE20001022652 |
申请日期 |
2000.04.28 |
申请人 |
HAHN-MEITNER-INSTITUT BERLIN GMBH |
发明人 |
AGGOUR, MOHAMMED;STOERKEL, ULRICH;LEWERENZ, HANS-JOACHIM |
分类号 |
H01L31/032;(IPC1-7):H01L31/18;H01L31/033;H01L21/465 |
主分类号 |
H01L31/032 |
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