发明名称 Process for selectively removing impurity phases on the surfaces of sulfide-containing chalcopyrite semiconductors comprises electrochemically etching the impurity phases using an electrolyte having an alkaline pH value
摘要 Process for selectively removing impurity phases on the surfaces of sulfide-containing chalcopyrite semiconductors comprises electrochemically etching the impurity phases using an electrolyte having an alkaline pH value; immersing a sulfide-containing chalcopyrite semiconductor sample having impurity phases on its surface into the electrolyte; and applying a potential between the measuring electrode and the counter electrode. Preferred Features: An aqueous solution of potassium sulfate having a concentration of 0.1 M and a pH of at least 10 is used as electrolyte in a three electrode cell containing a measuring electrode, counter electrode and reference electrode, and the potential is cyclically determined several times opposite the reference electrode in a determined region.
申请公布号 DE10022652(A1) 申请公布日期 2001.11.08
申请号 DE20001022652 申请日期 2000.04.28
申请人 HAHN-MEITNER-INSTITUT BERLIN GMBH 发明人 AGGOUR, MOHAMMED;STOERKEL, ULRICH;LEWERENZ, HANS-JOACHIM
分类号 H01L31/032;(IPC1-7):H01L31/18;H01L31/033;H01L21/465 主分类号 H01L31/032
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