Semiconductor light quanta detector - covers different spectral regions with two similar layers of semiconductor material differing by their dopant level

摘要

The semiconductor device for light quanta detection covers various spectral zones and has two sections made of the same type of conductivity but differing by their concentration of the impurity. One section has a dope concentration of 1019-1020 atoms //cm3 and is 0.1-0.15 mu m thick, while the other section has a dop concentration of 1014-1015 atoms/cm3 and a thickness of 100-200 mu m. The two sections are provided with ohmic contact electrodes. They feed a voltage which is sufficient to produce charge a carrier with the incident light and with multiplication due to impact ionization. The thin semiconductor layer (2) has an ohmic contact (3) while the thick layer (1) has a metal contact (4), the charge carrier pairs formed by the light beam (5) on the junction of the two layers.