System for pretesting electronic memory locations and automatically identifying faulty memory sections

摘要

An MOS RAM read/write memory system has thirty-two 1 x 512 bit RAM memory chips arranged in a matrix. The system pretests all data bit locations for each address prior to the entry of any data into that address, and automatically skips an address having a faulty data bit location in it. In addition, the system functions, upon reading out of data information from the memory chips, to uniquely identify any faulty MOS RAM memory chip; so that it may be removed and replaced if desired.