发明名称 Circuit combining bipolar transistor and JFET{3 s to produce a constant voltage characteristic
摘要 A pair of FET's are coupled in series between the emitter and collector of a bipolar transistor and the juncture of the FET's coupled to the bipolar transistor base. The FET gates are coupled to the bipolar transistor collector. When a current is passed through the emitter-collector terminals in excess of a threshold value, a constant voltage will appear over a substantial current range. The constant voltage is related to FET Vp and can be used to compensate or track integrated circuits that contain both FET's and bipolar transistors.
申请公布号 US4066917(A) 申请公布日期 1978.01.03
申请号 US19760682290 申请日期 1976.05.03
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 COMPTON, JAMES B.;OCHI, SAM S.
分类号 G05F3/20;H01L27/07;(IPC1-7):H01L29/80;H01L27/02;H03K17/60 主分类号 G05F3/20
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