发明名称 |
METHOD OF MANUFACTURING NICKEL ETCHING MASK |
摘要 |
PURPOSE: A nickel etching mask manufacturing method is provided to simplify a process of making a thick metal mask by excluding a wet etching and a cleaning. CONSTITUTION: A chromium seed layer(22) is sputtered on a silica film formed on a silicon substrate. A thick PR layer is coated on the chromium seed layer. The PR layer is patterned by immersing the same into a chlorobenzene solution. A first nickel layer is sputtered on the PR pattern, so that a first nickel seed layer being layered on the PR pattern and on the chromium layer between the PR pattern. A second nickel layer(28) is formed on a first nickel layer(27) only on the chromium layer by plating. The PR pattern and the first nickel layer on the PR pattern are removed with acetone. The chromium seed layer is dry etched out in plasma by using gas.
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申请公布号 |
KR20020007562(A) |
申请公布日期 |
2002.01.29 |
申请号 |
KR20000040909 |
申请日期 |
2000.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, DEOK YONG;JUNG, SEON TAE;LEE, JU HUN |
分类号 |
G02B6/13;G02B6/12;G02B6/136;H01L21/033;(IPC1-7):G02B6/10 |
主分类号 |
G02B6/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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