| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an semiconductor memory device which is capable of freely adjusting the tilt of the Vg-Id characteristic curve and adjusting it to the memory cell. SOLUTION: The nonvolatile semiconductor memory device of this invention comprises the reference circuit which is composed of a plurality of reference cell transistors and signal line which are interconnected and applied with same gate voltage, reference circuit passing through the total current of each current flowing reference cell transistors corresponding to each gate voltage to the signal line, the memory cell arrays that includes memory cells which store data, comparative circuit which compares the current passing the signal line and the current that corresponds to memory cells of the memory arrays and the threshold voltage setting circuit that adjust some threshold voltage of some among a plurality of reference cell transistors so that the shape of the voltage- current characteristic between the gate voltage and the current that flows through the signal line approaches to the shape of the voltage-current characteristics of the memory cell.</p> |
