| 发明名称 |
SEMICONDUCTOR DEVICE HAVING PN JUNCTIONS |
| 摘要 |
PURPOSE:To obtain a bipolar IC of low noise by diffusion-forming an N type layer containing a high concentration of phosphorus in the P<+> tyep isolating layers provided near P type base layers. |
| 申请公布号 |
JPS52156572(A) |
申请公布日期 |
1977.12.27 |
| 申请号 |
JP19760073173 |
申请日期 |
1976.06.23 |
| 申请人 |
HITACHI LTD |
发明人 |
YAMANAKA KOUJI;FUKUYAMA MASATAKA |
| 分类号 |
H01L29/73;H01L21/331;H01L21/761;H01L29/06 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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