| 摘要 |
<p>Described is a technique for generating directly certain derivatives of device parameters by measuring the device response to ac modulation under conditions of constant modulation index. In particular, the technique as it applies to measuring directly idF/di and i2d2F/di2 for AlGaAs DH p-n junction lasers is described for two cases: where the generalized function F equals either voltage V across the laser or the light intensity output L of the laser, and i equals current through the laser. For p-n junction lasers this technique permits measurement of the series resistance Rs, lasing current threshold ith and the exponential factor beta = q/nkT.</p> |
