| 摘要 |
PURPOSE: An apparatus for fabricating a semiconductor is provided to embody a uniform thin film and control generation of polymer by diffusing reaction gas from a relatively close place to a wafer through a side flow process and by diffusing source gas from a position higher than the place of the diffused reaction gas through a top flow process. CONSTITUTION: A gas storing apparatus(140) stores at least one gas material. A chamber(120) in which a wafer(1) is settled is connected to a gas inflow apparatus(122) which makes at least one gas material flow to the inside of the chamber and diffuses to spray the gas material inside the chamber. One end of the first inflow pipe(123a) and one end of the second inflow pipes(123b) are connected to the gas storing apparatus and the other ends of the first and second inflow pipes are leaded to the inside of the chamber. The first injector(170a) of a top flow method includes a plurality of the first injector holes facing the wafer from a place right over the wafer, connected to the other end of the first inflow unit. The second injector(170b) of a side flow method includes a plurality of the second injector holes facing the wafer from a place over a side of the wafer, connected to the other end of the second inflow pipe and forming a part of the sidewall of the chamber. The second injector is of a ring type, installed under the first injector.
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