| 发明名称 |
ELECTRODE FORMATION METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To prevent the decrease in bonding force and reliability of gold wires by removing the underlying poly-Si film of the lower part of bonding pads and sufficiently lowering the Si concentration in Al film. |
| 申请公布号 |
JPS52155971(A) |
申请公布日期 |
1977.12.24 |
| 申请号 |
JP19760072636 |
申请日期 |
1976.06.19 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MASUDA MASAYUKI;MORITA YOUJI;NAKAGAWA KOUICHI |
| 分类号 |
H01L21/60;H01L21/28;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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