| 摘要 |
PURPOSE:To prevent deterioration of the device and thereby to prolong its life by providing a GaInP protective layer being stable to the air on an Al GaInP clad layer on the light-emitting window side in an Al GaInP visible light surface emitting diode. CONSTITUTION:An n-type Ga0.5In0.5P layer 2, an n-type (Al0.6Ga0.4)0.5In0.5P clad layer 3, GaInP active layer 4, p-type (Al0.5Ga0.4)0.5In0.5P clad layer 5 and p-type GaAs contact layer 6 are formed in order by crystal growth on an n-type GaAs substrate 1. Next, in order to form a light-emitting window, the n-type GaAs substrate 1 is etched up to the surface of the n-type Ga0.5In0.5P layer 2 to expose the Ga0.5In0.5P layer 2 to the light-emitting window surface. Thereby, as to device deterioration, the light-emitting surface is free from oxidation deterioration due to the effect of the Ga0.5In0.5P protective layer, long life can be expected. |
