| 摘要 |
<p>A semiconductor element is made with a diffusion layer which is deeper where it is covered by a contact; and with a layer of heat resisting metal, pref. polycrystalline Si (I) used as a conductor. A substrate of conductivity (a) is covered by a layer (II) of insulation which is selectively removed to form a window for a contact, and the device is then covered by (I). Impurities of conductivity (b) are diffused through (I) and the window to form a zone (Z1) in the substrate with thickness (t1). Layer (II) and the (I) are partly removed to leave a mask permitting further diffusion of impurities of conductivity (b) into the substrate to form a zone (Z2) adjacent to zone (Z1) and with a thickness (t2) greater than (t1). A contact is then applied to zone (Z1). Zone (Z1) is pref. obtd. by thermal diffusion and zone (Z2) by ion implantation. Method us used for mfr. of MIS-FETs, to avoid the usual disadvantages and to increase the switching speed of the devices without increasing the number of mfg. operations. The method can also be used on other semiconductors e.g. bipolar resistor or capacitive-elements.</p> |
