| 摘要 |
1496094 Photo-resist materials and processes INTERNATIONAL BUSINESS MACHINES CORP 19 May 1976 [30 June 1975] 20613/76 Heading G2C A positive resist image is formed by selectively exposing a polymeric film comprising a) 50 to 99À5 mole per cent of poly alkyl methacrylate and b) 0À5 to 50 mole per cent of poly acrylic acid, methacrylic acid and/or crotonic acid; treating the film with an agent which swells only the exposed areas and removing the swollen areas with a liquid which is incapable of molecularly dissolving the film. The preferred polymers are a) poly methyl methacrylate and/or poly t-butyl methacrylate and b) poly methacrylic acid. The exposing radiation may be electron beam, x-ray or U.V light. The swelling agent is a mixture of a solvent for the polymer and a nonsolvent liquid which is incapable of dissolving the polymer,regardless of molecular weight. Examples of the solvent are methyl and ethyl "Cellosolve, (Registered Trade Mark), methyl and ethyl "Cellosolve" acetate, cyclopentanone, cyclohexanone and cycloheptanone and the non- solvent liquid is an aliphatic monohydric alchohol e.g. methyl, ethyl, isopropyl, n-butyl, isobutyl or hexyl alcohol. The nonsolvent liquid is used alone to remove the swollen portions, preferably in conjunction with ultrasonic agitation. The film may be baked prior to exposure at a temperature of from 140‹C to 230‹C and/or postbaked at 100‹C to 170‹C.
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