Device for epitaxial growing of semiconductor periodic structures from gas phase

摘要

A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprises a pressure-tight tubular reactor filled with gas and set in a tilted position, an electric motor located outside the reactor and designed to rotate said reactor about its longitudinal axis, at least one group of elements located inside the reactor, comprising a holder of at least two sources of substances of different solid semiconductor materials, which are adjacent to each other, a unit for holding at least one substrate and a device for maintaining a constant clearance between the surfaces of the substrate and the sources, as well as heaters of the sources and the substrate located outside the reactor.