| 发明名称 |
VAPOR PHASE GROWTH METHOD FOR COMPOUND SEMICONDUCTOR OF GROUPS IIIIV |
| 摘要 |
PURPOSE:In effecting the vapor phase growth of the compounds of groups III-V by pyrolysis, it is intended to obtain a grown layer undergoing no substantial change in thickness and specific resistance by adding a gas containing vapor of iron pentacabonyl to a reaction gas. |
| 申请公布号 |
JPS52153374(A) |
申请公布日期 |
1977.12.20 |
| 申请号 |
JP19760069926 |
申请日期 |
1976.06.15 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
UDAGAWA TAKASHI |
| 分类号 |
C30B25/02;C23C16/30;C30B29/40;H01L21/205 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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