发明名称 |
Virtually nonvolatile random access memory cell |
摘要 |
A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a nonvolatile form from which it may late be recovered. Since only on external command is the information transferred into the nonvolatile storage mode, the memory is described as a virtually nonvolatile RAM.
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申请公布号 |
US4064492(A) |
申请公布日期 |
1977.12.20 |
申请号 |
US19760729633 |
申请日期 |
1976.10.05 |
申请人 |
SCHUERMEYER, FRITZ L.;YOUNG, CHARLES R. |
发明人 |
SCHUERMEYER, FRITZ L.;YOUNG, CHARLES R. |
分类号 |
G11C11/404;G11C14/00;G11C16/04;H01L27/108;H01L29/792;(IPC1-7):G11C7/00;G11C11/24;G11C11/34 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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