发明名称 Virtually nonvolatile random access memory cell
摘要 A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a nonvolatile form from which it may late be recovered. Since only on external command is the information transferred into the nonvolatile storage mode, the memory is described as a virtually nonvolatile RAM.
申请公布号 US4064492(A) 申请公布日期 1977.12.20
申请号 US19760729633 申请日期 1976.10.05
申请人 SCHUERMEYER, FRITZ L.;YOUNG, CHARLES R. 发明人 SCHUERMEYER, FRITZ L.;YOUNG, CHARLES R.
分类号 G11C11/404;G11C14/00;G11C16/04;H01L27/108;H01L29/792;(IPC1-7):G11C7/00;G11C11/24;G11C11/34 主分类号 G11C11/404
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