发明名称 Two-phase charge transfer device image sensor
摘要 A charge coupled device capable of operating with two phase clock pulses wherein asymmetrical potential wells are established by the use of channel stoppers which are formed on opposite edges of the charge coupled device and which have restricted portions through which the charges can flow from one storage area to the other.
申请公布号 US4064524(A) 申请公布日期 1977.12.20
申请号 US19760703792 申请日期 1976.07.09
申请人 SONY CORPORATION 发明人 HAGIWARA, YOSHIAKI;YAMAZAKI, HIROSHI
分类号 H01L21/339;H01L27/148;H01L29/06;H01L29/10;H01L29/762;H01L29/768;H04N5/335;H04N5/341;H04N5/3728;(IPC1-7):H01L29/78;H01L27/14;H01L31/00;H01J39/12 主分类号 H01L21/339
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