发明名称 METHOD FOR MANUFACTURING AN ELECTRIC DEVICE WITH A LAYER OF CONDUCTIVE MATERIAL CONTACTED BY NANOWIRE
摘要 <p>The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention. ® KIPO & WIPO 2007</p>
申请公布号 KR20070028604(A) 申请公布日期 2007.03.12
申请号 KR20077002272 申请日期 2007.01.29
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 VAN SCHAIJK ROBERTUS T. F.;AGARWAL PRABHAT;BAKKERS ERIK P. A. M.;LANKHORST MARTIJN H. R.;VAN DUUREN MICHIEL J.;BALKENENDE ABRAHAM R.;FEINER LOUIS F.;WOERLEE PIERRE H.
分类号 H01L21/768;H01L45/00 主分类号 H01L21/768
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