| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCTION |
| 摘要 |
PURPOSE:To lower the resistance of emitter regions and reduce voltage drop by forming an N<+> type region in the P type emitter region of a PNP transistor and shortcircuiting this region and the P type region including this region with metal films provided in required positions. |
| 申请公布号 |
JPS52152181(A) |
申请公布日期 |
1977.12.17 |
| 申请号 |
JP19760068820 |
申请日期 |
1976.06.14 |
| 申请人 |
HITACHI LTD |
发明人 |
TAKEUCHI TAKASHI;OOMURA YOSHITO;OKABE TAKAHIRO |
| 分类号 |
H01L21/331;H01L21/8226;H01L27/082;H01L29/73;H03K19/091 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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