| 摘要 |
Optical transistor to which additionally unit for heating semiconductor element is included. Working temperature of element, its form and dimensions, coefficients of reflection of radiation from surface of element at wavelength of short-wave radiation and in spectral region of absorption of radiation with charge free carriers, effective life time of free charge carriers, coefficient of refraction of semiconductor material, cross-sections of absorption of radiation by free charge carriers in semiconductor material. Coefficients of absorption of radiation in semiconductor material by free charge carriers satisfy condition of amplification of optical signal. From product of power of thermal emission of electron in conductivity zone that goes out of element by electron lifetime in conductivity zone and product of power of thermal emission of hole in valence zone, that goes from element, by lifetime of hole in valence zone, larger that ration of energy of quantum of short-wave optical radiation to quantum part of short-wave optical radiation generated by free carriers in semiconductor element.
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