发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To let single mode oscillation to be accomplished by applying mesa etching of mutually varying depths to the epitaxial grown layer of a multilayer hetero junction type laser composed of group III-V compound semiconductors and forming two resonators.
申请公布号 JPS52150990(A) 申请公布日期 1977.12.15
申请号 JP19760067582 申请日期 1976.06.11
申请人 NIPPON TELEGRAPH & TELEPHONE;NIPPON ELECTRIC CO;FUJITSU LTD 发明人 WAKITA KOUICHI;MIZUSAWA KOUJI;NISHITANI YOSHIMITSU
分类号 H01L33/14;H01L33/20;H01L33/30;H01S5/00 主分类号 H01L33/14
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