发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
PURPOSE:To let single mode oscillation to be accomplished by applying mesa etching of mutually varying depths to the epitaxial grown layer of a multilayer hetero junction type laser composed of group III-V compound semiconductors and forming two resonators. |
申请公布号 |
JPS52150990(A) |
申请公布日期 |
1977.12.15 |
申请号 |
JP19760067582 |
申请日期 |
1976.06.11 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE;NIPPON ELECTRIC CO;FUJITSU LTD |
发明人 |
WAKITA KOUICHI;MIZUSAWA KOUJI;NISHITANI YOSHIMITSU |
分类号 |
H01L33/14;H01L33/20;H01L33/30;H01S5/00 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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