| 摘要 |
Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided, and methods for transferring a carrier gas saturated with the precursor compound for delivery into chemical vapor deposition reactors are provided, wherein the devices comprise a precursor composition of a solid precursor compound with a packing material layer disposed thereon. A vapor phase delivery device for a solid precursor compound comprises: a cylinder(10) including a chamber(12) made of a precursor composition or constituted with a precusor composition; a gas inlet(19); a gas outlet(20); a fill port(18); and a dip-tube(21) connected to the gas outlet, wherein the precursor composition comprises a solid precursor compound(27) and a layer of a packing material(26) disposed on the solid precursor compound. The solid precursor compound is selected from: trialkyl indium compounds; trialkyl indium-amine adducts; dialkyl haloindium compounds; alkyl dihaloindium compounds; cyclopentadienyl indium; trialkyl indium-trialkyl arsine adducts; trialkyl indium-trialkyl-phosphine adducts; alkyl zinc halides; cyclopentadienyl zinc; ethylcyclopentadienyl zinc; alkyl dihaloaluminum compounds; alane-amine adducts; alkyl dihalogallium compounds; dialkyl halogallium compounds; biscyclopentadienyl magnesium; silicon compounds; germanium compounds; carbon tetrabromide; metal dialkylamides; and metal beta-diketonates. The packing material is selected from ceramics, glasses, clays, graphite and organic polymers. The dip-tube further comprises a porous element. The solid precursor compound is fritted. The packing material comprises a stabilizing agent.
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