发明名称 Temperature independent semiconductor resistor and method of making same
摘要 A polycrystalline film having an electrical resistivity independent of temperature is disclosed. The film has substantially only one crystalline phase. The crystals forming that phase are of a semiconductive material supersaturated with a deep level dopant and have average dimensions from about 200 to 10,000 angstroms. At least about 10 atomic percent of the deep level dopant is dispersed within the semiconductive material crystals forming the one crystalline phase. The film is useful in making an electrical resistor whose resistance value is independent of temperature from about 4 DEG Kelvin to approximately 373 DEG Kelvin. Aging effects limit utility at significantly higher temperatures.
申请公布号 US4063210(A) 申请公布日期 1977.12.13
申请号 US19760658846 申请日期 1976.02.17
申请人 GENERAL MOTORS CORPORATION 发明人 COLLVER, MICHAEL W.
分类号 H01C7/06;(IPC1-7):H01C7/02 主分类号 H01C7/06
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