| 摘要 |
A plasma process method is provided to control the direction of plasma generated between electrodes along a process surface of a substrate being loaded between the electrodes. A plasma process apparatus(10) includes a process chamber(100). A gas inlet(101) is formed on a sidewall of the process chamber for injecting process gas into the process chamber. The gas inlet is formed at a height between an upper electrode(210) and a lower electrode(220). A gas supply line(102) is connected to the gas inlet. A gas supply source(104) is connected to another side of the gas supply line. A filter(106) for filtering the process gas supplied from the gas supply source and a value(108) for controlling a flow amount of the process gas are arranged between the gas inlet and the gas supply source. A substrate is loaded between the upper electrode and the lower electrode and the direction of plasma is controlled to process the substrate.
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