发明名称 |
Method for manufacturing MOS transistor |
摘要 |
Disclosed is a method for fabricating a MOS transistor. The present method includes forming a buffer layer pattern including nitrogen on the semiconductor substrate; forming a gate insulating layer and a gate electrode on the exposed substrate surface; forming a LDD region in the substrate under the buffer pattern; forming a spacer on a top surface of the buffer pattern and sidewalls of the gate electrode; and forming a source/drain region in the substrate under the buffer pattern.
|
申请公布号 |
US7358595(B2) |
申请公布日期 |
2008.04.15 |
申请号 |
US20060483143 |
申请日期 |
2006.07.07 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SHIN EUN JONG |
分类号 |
H01L23/58;H01L21/302;H01L21/461 |
主分类号 |
H01L23/58 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|