| 摘要 |
1532616 Electro-depositing semi-conductors MONOSOLAR Inc 30 May 1977 [8 June 1976] 22719/77 Heading C7B [Also in Division H1] A semi-conductor voltaic cell is made by electrolytic deposition of a transparent semi-conductor compound of Cd, Zn or Hg with S, Se or Te, optionally doped with In, Ga, Al, As, P or Sb, these components coming from the bath via added compound(s) and/or soluble anode. A Schottky barrier is formed on a metallic substrate, or an n-p junction formed by deposition of two different semiconductor types in separate steps by the alteration of electrolytic conditions and/or ratio of depositable substances. The finished cell may include a transparent glass or acrylic base 58 bearing in succession a matrix 62, 64 of conductor, a transparent (Sbdoped S n O 2 or Sn-doped InO 2 ) conductor layer 66, the electro-deposited semi-conductor layers 70, 72 and an internally reflecting metal layer 76. Layers 66 and 70 are of the same conductivity type. A hetero- or homojunction may be produced. |
