| 摘要 |
The formation of a one time programmable (OTP) transistor based electrically programmable read only memory (EPROM) cell ( 100 ) is disclosed. The cell ( 100 ) includes multiple concentric rings ( 108, 110 ) out of which gate structures are formed. An inner transistor based cell ( 130 ) formed from the inner ring ( 108 ) is shielded from isolation material ( 106 ) by one or more outer rings ( 110 ). The lack of overlap between the inner transistor and any isolation material promotes enhanced charge/data retention by mitigating high electric fields that may develop at such overlap regions ( 30, 32 ).
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