LIGHT EMITTING DIODE WITH HIGH ELECTROSTATIC DISCHARGE AND FABRICATION METHOD THEREOF

摘要

A light emitting diode with high electrostatic discharge and a fabricating method thereof are provided to enhance electrostatic discharge characteristics by changing only an arrangement of an electrode layer. A first electrode layer(205) is formed over an upper surface of a first semiconductor layer(201) and an upper surface of a second semiconductor layer(203). A transparent electrode layer(204) is formed on an upper surface of the second semiconductor layer apart from the first electrode layer. A second electrode layer(206) is formed on an upper surface of the transparent electrode layer. The first and second semiconductor layers are composed of heterogeneous semiconductor layers doped with impurities of different types.