发明名称 SILICONE COATING OF LOW DIELECTRIC CONSTANT, PREPARATIVE PROCESS AND APPLICATION TO INTEGRATED CIRCUITS
摘要 The invention relates to a method for producing a low dielectric constant silicon coating consisting in a) in applying a film-forming silicon composition to a support surface, wherein said silicon composition comprises: (i) at least one type of film-forming silicon cross-linking resin, (ii) at least one type of E, i-hydroxylated substantially linear heat-degradable silicon oil, and (iii) at least one type of solvent for compatibilising the silicon resin (i) and silicon oil (ii), b) in simultaneously or sequentially removing the solvent (iii), preferably by heating, and c) in boiling the film-forming silicon composition. A silicon coating obtained by carrying out the inventive method and an integrated circuit comprising said silicon coating in the form of an electric insulator are also disclosed.
申请公布号 KR20080067613(A) 申请公布日期 2008.07.21
申请号 KR20087006683 申请日期 2006.08.16
申请人 RHODIA CHIMIE 发明人 GIRAUD YVES;VERGELATTI CAROLL;TUPINIER DIDIER;ODONI LUDOVIC;BASIRE CHARLOTTE;TROUILLET LISE
分类号 C09D183/04;C09D5/00 主分类号 C09D183/04
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