HETEROJONCTIONS-TRANSISTOR

摘要

1524339 Transistors SOC ANON COMPAGNIE GENERALE D'ELECTRICITE 13 May 1977 [20 May 1976] 20179/77 Heading H1K In a transistor having a heterojunction as the emitter junction a portion 20 of the base region 6 spaced from the emitter region 8 is caused to have a resistivity at least 1000 times greater than that of the active base portion by the presence of crystalline defects in the portion 20. The defects may be introduced into the base portion 20 by implantation of hydrogen ions. Preferred materials for the various regions, and a preferred manufacturing sequence, are disclosed. The transistor may be a phototransistor having no base contact.