| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently execute precharge operation of a plurality of banks to improve access efficiency of a semiconductor memory. <P>SOLUTION: A memory controller sequentially holds an access request including an access address. The semiconductor memory comprises the plurality of banks each having a plurality of pages. The memory controller decides a page hit/a page mistake of the bank corresponding to each of the held access addresses. The memory controller outputs an all bank precharge command for executing the precharge operation of all the banks when deciding that the access efficiency is improved by analyzing the successive access address. Because the plurality of banks can be precharged by a one-time all bank precharge command, the command can be supplied to the semiconductor memory according to a state of the bank even when a vacant cycle inserted with the command is small. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
