| 发明名称 |
NONVOLATILE MEMORY DEVICE AND ITS DRIVING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and especially a driving method of a nonvolatile memory device. <P>SOLUTION: The driving method of a nonvolatile memory device includes: a step in which a structural position of a memory cell to be driven is determined; and a step in which driving is made under driving conditions, which correspond to the distribution of threshold voltages which belong to the memory cell, according to the result of the determination. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008210503(A) |
申请公布日期 |
2008.09.11 |
| 申请号 |
JP20080046477 |
申请日期 |
2008.02.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK KI TAE;KIM KI-NAM;LEE YEONG-TAEK |
| 分类号 |
G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
